Reaction paths of phosphine dissociation on silicon (001)

- Warschkow, O., Curson, N. J., Schofield, S. R., Marks, N. A., Wilson, H. F., Radny, M. W., Smith, P. V., Reusch, T. C. G., McKenzie, D. R., Simmons, M. Y.

Single hydrogen atoms on the Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G, Warschkow, O., Marks, N. A., Wilson, H. F., Schofield, S. R., Curson, N. J., McKenzie, D. R., Simmons, M. Y.

Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G., Warschkow, O., Marks, N. A., Wilson, H. F., Curson, N. J., Schofield, S. R., McKenzie, D. R., Simmons, M. Y.

Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C .G., Warschkow, O., Marks, N. A., Wilson, H. F., Curson, N. J., Schofield, S. R., McKenzie, D. R., Simmons, M. Y.

Molecular dissociation of group-V hydrides on Si(001)

- McDonell, T. L., Marks, N. A., Warschkow, O., Wilson, H. F., Smith, P. V., Radny, M. W.

Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures

- Warschkow, O., Wilson, H. F., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y.

Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures

- Warschkow, O., Wilson, H. F., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y.

Phosphine dissociation on the Si(001) surface

- Wilson, H. F., Warschkow, O., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y.